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 UNISONIC TECHNOLOGIES CO., LTD DTD143E
DIGITAL TRANSISTORS (BUILT- IN RESISTORS)
FEATURES
* Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * The bias resistors consist of thin film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. * Only the on / off conditions need to be set for operation, making device design easy.
NPN EPITAXIAL SILICON TRANSISTOR
3
2
1
SOT-23
3
2
1
EQUIVALENT CIRCUIT
R1 IN R2 GND IN GND OUT OUT
SOT-323
*Pb-free plating product number:DTD143EL
ORDERING INFORMATION
Order Number Normal Lead Free Plating DTD143E-AE3-6-R DTD143EL-AE3-6-R DTD143E-AL3-6-R DTD143EL-AL3-6-R Package SOT-23 SOT-323 Pin Assignment 1 2 3 G I O G I O Packing Tape Reel Tape Reel
DTD143EL-AE3-6-R
(1)Packing Type (2)Pin Assignment (3)Package Type (4)Lead Plating
(1) R: Tape Reel (2) refer to Pin Assignment (3) AE3: SOT-23, AL3: SOT-323 (4) L: Lead Free Plating, Blank: Pb/Sn
MARKING
DE3
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd
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DTD143E
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25C)
PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC 50 V Input Voltage VIN -10 ~ +30 V Output Current IOUT 500 mA Power Dissipation PD 200 mW Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (Ta=25C)
SYMBOL VIN(OFF) Input Voltage VIN(ON) Output Voltage VOUT(ON) Input Current IIN Output Current IOUT(OFF) DC Current Gain GIN Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT * Transition frequency of the device PARAMETER TEST CONDITIONS VCC =5V, IOUT =100A VOUT =0.3V, IOUT =20mA IOUT/IIN =50mA/2.5mA VIN=5V VCC =50V, VIN =0V VOUT =5V, IOUT =50mA MIN 3 0.1 0.3 1.8 0.5 6.11 1.2 TYP MAX 0.5 UNIT V V mA A K MHz
47 3.29 0.8
VCE =10V, IE =-50mA, f=100MHz *
4.7 1 200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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DTD143E
TYPICAL CHARACTERISTIC
Input Voltage vs. Output Current (ON Characteristics) 100 50
Input Voltage, VIN (ON) (V)
NPN EPITAXIAL SILICON TRANSISTOR
Output Current vs. Input Voltage (OFF Characteristics) 10m 5m 2m 1m
Output Current, IOUT (A)
VOUT=0.3V
VCC=5V
20 10 5 2 1 500m 200m 100m 5001m 2m 5m 10m20m 50m100m200m 500m Output Current, IOUT (A)
DC Current Gain vs. Output Current 1K 500 200 Ta=100 25 -40 VOUT=5V
Ta=-40 25 100
50 200 100 50 20 10 5 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Input Voltage, VI(OFF) (V)
Output Voltage vs. Output Current 1 500m Ta=100 25 -40 lOUT/lIN=20
Ta=100 25 -40
Output Voltage, VOUT(ON) (V)
200m 100m 50m 20m 10m 5m 2m 1m 500 1m 2m
DC Current Gain, GI
100 50 20 10 5 2 1 5001m 2m 5m 10m20m 50m100m200m500m Output Current, IOUT (A)
5m 10m 20m 50m100m200m500m
Output Current, IOUT (A)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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